Model BID Insulated Gate Bipolar Transistor (IGBT) Discrete Solution

Aug. 20, 2022
Bourns' IGBT transistors use technology from a MOSFET gate and a bipolar transistor for high-voltage and high-current applications.

Model BID Series Insulated Gate Bipolar Transistor (IGBT) Discrete Solution combines technology from a MOSFET gate and a bipolar transistor for high-voltage and high-current applications.


This device uses advanced Trench-Gate Field-Stop technology to provide greater control of the dynamic characteristics which results in a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, due to the thermally efficient TO-252, TO-247, and TO-247N packages, the devices can provide a lower thermal resistance Rth(j-c), making them suitable IGBT solutions for Switch-Mode Power Supplies (SMPS), Uninterruptible Power Sources (UPS), and Power Factor Correction (PFC) applications.

  • 600 V, 5 A, low Collector-Emitter Saturation Voltage (VCE(sat))
  • Trench-Gate Field-Stop technology
  • Optimized for conduction
  • RoHS compliant
  • Low switching loss (Model BIDW20N60T; Model BIDNW30N60H3)
  • Fast switching (Model BIDNW30N60H3)


  • SMPS
  • UPS
  • PFC
  • Stepper motors (Model BIDW20N60T)
  • Induction heating (Model BIDW30N60T; Model BIDNW30N60H3)
  • Inverters (Model BIDW50N65T)
 BIDD05N60T BIDW20N60T  BIDW30N60T  BIDW50N65T  BIDNW30N60H3  PackageTO-252TO-247TO-247TO-247TO-247N FeatureMedium speedMedium speedMedium speedMedium speedHigh speed VCE600V IC @ T=100°C5 A20 A30 A50 A30 A Typ. VCE(sat) @ Ic, Vge=15V 1.5V1.7V1.65V1.65V1.65V IF @ T=100°CN/A20 A30 A50 A12 A Operating Temp.-67 to 302°F (-55 to +150°C)